Direct observations of the vacancy and its annealing in germanium
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Positron annihilation studies on vacancy defects in group IV semiconductors
Electrical properties of semiconductor materials are greatly influenced by point defects such as vacancies and interstitials. These defects are common and form during the growth and processing of the material. Positron annihilation spectroscopy is a method suitable for detecting and studying vacancy-type lattice defects. In this work, the formation, properties, and annealing of vacancy defects ...
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Rights: © 2008 American Physical Society (APS). This is the accepted version of the following article: Slotte, J. & Rummukainen, M. & Tuomisto, Filip & Markevich, V. P. & Peaker, A. R. & Jeynes, C. & Gwilliam, R. M. 2008. Evolution of vacancy-related defects upon annealing of ion-implanted germanium. Phys. Rev. B. Volume 78, Issue 8. 085202/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.7...
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